Are you ambitious to control the size of the silicon grains in casting process?

Grain are directly linked to the crystal dislocation. Crystal dislocation density depends on:

• Crystal nucleation temperature gradient
• Precipitates concentration

Controlling the temperature profile at the point of crystal nucleation is crucial in order to obtain a good quality DS ingots.

Controlling the concentration of Carbon in the silicon melt in order to avoid SiC particles is crucial to obtain a good material quality in DS ingots.

FEMAG-DS simulator allows the engineers to design a process setup that optimize the material quality.