Growing crystals with uniform resistance along axial and radial direction is a puzzle. Would you like to crack it?

Key characteristics of a high resistivity or ultrahigh resistivity silicon wafer are a uniform resistivity through the thickness of the wafer, acceptable radial and axial resistivity gradients, and a resistivity that remains stable throughout device processing.These characteristics are dependent on crystal growth setup, as well as the amount and type of “dopant” added during the growth of silicon crystals.By computing the distribution of dopant during the crystal growth process as function of the setup, dopant type and amount, FEMAGCZ simulator allows the engineers to design an optimal process resulting in uniform resistivity.Some of the early adopters of our FEMAG Czochralski technology have grown to became a world market leader in the semiconductor industry.