Oxygen content control - Czochralski (CZ) Process

THE SOFTWARE FOR BULK
CRYSTAL SIMULATION

Growth of very large ingot diameter
Defect free ingot growth
Process yield increase
Resistivity variance decrease
CCZ process
Magnetic field
LED crystal growth process design

Home ›› Products ›› Czochralski (CZ) Process ›› Oxygen content control

Oxygen content control

Oxygen is vital including for silicon crystals. Controlling oxygen concentration along the radial and axial direction of the crystal from the neck to the tail end, is an engineering challenge!!!

While for N-type solar cells, the concentration of oxygen must be as low as possible, it must be well controlled for IC wafer. For both applications, FEMAG Czochralski simulator computes the oxygen distribution in the crystal as a function of the process setup (hotzone configuration and operating conditions). Our clients are using the FEMAG Czochralski Transverse Magnetic Field (FEMAGCZ TMF) simulator to test new technologies (like magnetic fields) for optimizing the oxygen distribution. FEMAG Czochralski simulator will provide your team with innovative oxygen model to predict exactly the evolution on oxygen in the crystal.

Related Articles