Attempting to grow large crystal without feasible studies is like burning cash believing that ash will become gold at the end.

In order to grow defect free silicon ingots of very large diameter – 450 mm or more, crystal growers use FEMAGCZ to define the key process parameters without any materials and energy consumptions.

FEMAGCZ is used to design the hot zone and process recipe. With the help of FEMAG Czochralski simulation technology crystal growers can optimize each and every key parameters like rotation rates, pull speed, gas flow rate, pressure and power consumption in an effective virtual environment. FEMAG Czochralski simulation does not stop there it takes one step further to give crystal growers insight about the quality and cost of their end product in a given configuration i.e., Crystal quality thermal gradient in the crystal, oxygen/carbon/dopant/microvoids distribution, etc.

Silicon/Germanium/Sapphire ingots quality and cost of production information can be obtained virtually without any materials and energy consumptions.