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Related Articles

  • Growth of very large ingot diameter
  • Process yield increase
  • Oxygen content control
  • Resistivity variance decrease
  • CCZ process
  • Magnetic field
  • LED crystal growth process design
Home ›› Products ›› Czochralski (CZ) Process ›› Defect free ingot growth
Defect free ingot growth
Growing defect free silicon crystals is one of the worlds top secrets. Our Czochralski simulator can help you build your own secret to grow defect free crystals

Using the Defects engineering module of FEMAGSoft, crystal growers can predict the quality of the crystals grown in their furnace or in any specific Czochralski setup.

The defects engineering module provide crystal growers with an insight on the evolution of interstitial, vacancies and microvoids during the growth of Silicon or Germanium.

FEMAGCZ can be your test playground to see the dependency and evolution of crystal quality based on the following operating conditions.

  • Hot zone configuration
  • Heater power
  • Crystal and crucible rotation rates
  • Crystal pull speed, crucible position
  • Gas flow rate and pressure

One who masters his crystal growth process behavior can find out the optimal setup to increase the quality and return on his investment.



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