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Related Articles

  • Growth of very large ingot diameter
  • Defect free ingot growth
  • Process yield increase
  • Oxygen content control
  • Resistivity variance decrease
  • Magnetic field
  • LED crystal growth process design
Home ›› Products ›› Czochralski (CZ) Process ›› CCZ process
CCZ process
Continuous Czochralski crystal growth technology is a complex and niche technology. Obviously it drains your money leading to bankrupt. Still wondering how to master this process?

Industry users dream to obtain ultrahigh resistivity silicon wafer using continuous Czochralski crystal growth method. High resistivity or ultrahigh resistivity silicon wafer are a uniform resistivity through the thickness of the wafer, acceptable radial and axial resistivity gradients, and a resistivity that remains stable throughout device processing.

When it comes to reality significant amount of cash have to be burned for test setup and experiments before producing crystal for industry applications. With FEMAG Czochralski simulator one has the same information at less than one tenth of their experimental cost.

FEMAGCCZ will help crystal growers understand their CCZ process quality and cost drivers. CCZ crystal growers leverage their process risk using FEMAG Czochralski simulator. By computing the distribution of dopant during the crystal growth process as function of the setup, dopant type and amount, FEMAGCZ simulator allows the engineers to design an optimal process resulting in uniform resistivity.

FEMAG Czochralski simulator is the success key to master your CCZ process.

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