| Prediction of the point-defect distributions (self-interstitial and vacancy) in the growing crystal.
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The precise knowledge of the temperature field and of the interface shape allows to compute the point-defect distribution.
We use the self-interstitial distribution minus vacancy distributions to represent the ingot specification (intersitial rich or vacancy rich). |
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| Point-defect predictions for a Floating Zone-grown silicon crystal: self-interstitial distribution minus vacancy distribution. |
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