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Prediction of the point-defect distributions (self-interstitial and vacancy) in the growing crystal.
A dynamic simulation is mandatory to correctly predict the time dependency of the point defect distribution. |
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Point-defect predictions for a Czochralski-grown silicon crystal: (up-left) self-interstitial distribution (CI), (up-right) vacancy distribution (CV),
and (bottom) CI-CV distributions.
The dynamic simulation capability of FEMAG-CZ has been used to correctly predict the inherently time-dependent behaviour of point defect distribution. |
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